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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Random dopant fluctuation ： ウィキペディア英語版 Random dopant fluctuation Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage. In newer process technologies RDF has a larger effect because the total number of dopants is fewer, and the addition or deletion of a few impurity atoms can significantly alter transistor properties. RDF is a local form of process variation, meaning that two neighbouring transistors may have significantly different dopant concentrations.〔 Asenov, A. Huang, (Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study ), Electron Devices, IEEE Transactions, 45 , Issue: 12 〕 == References == 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Random dopant fluctuation」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.